| 1. | Using sige bicmos darlington configuration as the input stage , the input resistance is increased by the mos devices while the transconductance of sige hbts is maintained . in the same time , the equivalent input noise is controlled well because of the sige hbts ’ good noise performance in the input stage
输入级的设计采用sigebicmos达林顿结构,在保留sigehbt高跨导优势的基础上充分利用mos器件来提升运放输入电阻,此外,基于输入级中sigehbt良好的噪声特性,运放的输入参考噪声电压可以大大降低。 |
